发明名称 |
Graphene and Hexagonal Boron Nitride Planes and Associated Methods |
摘要 |
Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
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申请公布号 |
US2010218801(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20100713004 |
申请日期 |
2010.02.25 |
申请人 |
SUNG CHIEN-MIN;HU SHAO CHUNG;LIN I-CHIAO;YU CHIEN-PEI |
发明人 |
SUNG CHIEN-MIN;HU SHAO CHUNG;LIN I-CHIAO;YU CHIEN-PEI |
分类号 |
C23C14/06;B32B15/04;C23C14/24;H01L31/042 |
主分类号 |
C23C14/06 |
代理机构 |
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主权项 |
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地址 |
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