发明名称 Graphene and Hexagonal Boron Nitride Planes and Associated Methods
摘要 Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
申请公布号 US2010218801(A1) 申请公布日期 2010.09.02
申请号 US20100713004 申请日期 2010.02.25
申请人 SUNG CHIEN-MIN;HU SHAO CHUNG;LIN I-CHIAO;YU CHIEN-PEI 发明人 SUNG CHIEN-MIN;HU SHAO CHUNG;LIN I-CHIAO;YU CHIEN-PEI
分类号 C23C14/06;B32B15/04;C23C14/24;H01L31/042 主分类号 C23C14/06
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