STRIPPING COMPOSITIONS FOR CLEANING ION IMPLANTED PHOTORESIST FROM SEMICONDUCTOR DEVICE WAFERS

摘要

A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point > 65° C, at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.