| 发明名称 |
Fabrication of piezoelectric single crystalline thin layer on silicon wafer |
| 摘要 |
<p>The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 µm.
</p> |
| 申请公布号 |
EP2028703(A3) |
申请公布日期 |
2010.09.01 |
| 申请号 |
EP20080162225 |
申请日期 |
2008.08.12 |
| 申请人 |
THE HONG KONG POLYTECHNIC UNIVERSITY |
发明人 |
PENG, JUE;CHAO, CHEN;DAI, JIYAN;CHAN, HELEN L.W. |
| 分类号 |
B06B1/06;B81C1/00;H01L41/22 |
主分类号 |
B06B1/06 |
| 代理机构 |
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