| 摘要 |
<p>To enable a capacity of an entire storage device (101) to be maintained by adding a flash drive (104) or a flash module (105) in a flash drive to replace a flash memory that has a failure, for example, the flash memory chip comprises blocks which have been erased a maximum number of times.
In a storage device (101) comprising two or more flash memory device units (105), each flash memory device unit comprising a plurality of semiconductor flash memory devices (107) which are divided into plural blocks (109) capable of being erased a limited number of times, a block (109) which has been erased this number of times is determined as unable to be written (worn out) and is substituted by a block in a different semiconductor flash memory device belonging to a different flash memory device unit than the flash memory device unit which contains the worn out block.
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