| 摘要 |
For a method for manufacturing a reverse-conducting insulated gate bipolar transistor (RC-IGBT) (10) with a seventh layer (7,7') formed as a gate electrode and a first electrical contact (8) on a first main side (101) and a second electrical contact (9) on a second main side (102), which is opposite the first main side (101), a wafer (11) of a first conductivity type with a first side (111) and a second side (112) opposite the first side (111) is provided. For the manufacturing of the RC-IGBT (10) on the second main side (112) the following steps are performed:
- at least one third layer (3) of a first or second conductivity type or a ninth layer (32), which is of the same conductivity type as the third layer (3) and which is a continuous layer, is created on the second side (112) before at least one second layer (2) of a different conductivity type than the third layer (3) is created on the second side (112), the at least one second and third layers (2,3) being arranged alternately in the finalized RC-IGBT. |
