| 摘要 |
PURPOSE: A manufacturing method of a nanocrystal doped with manganese is provided to synthesize a high quality semiconductor nanocrystal doped with impurities using metal salt as a precursor. CONSTITUTION: A manufacturing method of a chalcogenide nanocrystal doped with manganese comprises the following steps: mixing an amine based material selected from the group consisting of a primary amine marked with chemical formula 1, a secondary amine marked with chemical formula 2, and their compound, with a metal salt marked with chemical formula 3, and manganese salt marked with chemical formula 4, to form a metal-amine complex compound solution; mixing sulfur powder, selenium powder, and seleno urea or seleno carbamate with the metal-amine complex compound solution to heat-treating.
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