Integrated circuit device and fabrication using metal-doped chalcogenide materials

摘要

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:
forming a chalcogenide layer (215) on the first electrode (210);
sputtering metal (240) onto the chalcogenide layer using a first plasma containing at least one component gas selected from the group consisting of neon and helium,
thereby forming the doped chalcogenide layer (230), wherein the first plasma emits a UV component sufficient to induce diffusion of the sputtered metal into the chalcogenide layer; and
sputtering metal (245) onto the doped chalcogenide layer using a second plasma containing at least one component gas having an atomic weight higher than an atomic weight of neon, thereby forming the second electrode (250).