| 摘要 |
<p>The embodiment discloses a semiconductor light emitting device (100). The semiconductor light emitting device includes a first conductive semiconductor layer (111); a first electrode layer (119) below the first conductive semiconductor layer; a semiconductor layer (120) at an outer peripheral portion of the first conductive semiconductor layer; an active layer (113) on the first conductive semiconductor layer; a second conductive semiconductor layer (115) on the active layer; and a second electrode layer (140) on the second conductive semiconductor layer.</p> |
