QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER
摘要
PURPOSE: A quantum dot light emitting device is provided to reduce the difference of an energy band level between a quantum dot light emitting layer and a hole transport layer by including a quantum dot light emitting and containing layer. CONSTITUTION: A first and a second electrode(14,22) are formed on a substrate(12). A first and a second charge transport layer(15,20) are formed between the first electrode and the second electrode. A quantum dot light emitting layer(18) is formed between the first charge transport layer and the second charge transport layer. The energy band level of at least one quantum dot containing layer(17) is different from the energy band level of the quantum dot light emitting layer. At least one among the first and the second charge transport layer is a hole transport layer. The other one among the first and the second charge transport layer is an electron transport layer.
申请公布号
KR20100095875(A)
申请公布日期
2010.09.01
申请号
KR20090014894
申请日期
2009.02.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHO, KYUNG SANG;CHOI, BYOUNG LYONG;LEE, EUN KYUNG;KIM, TAE HO;LEE, SANG JIN