发明名称 OPERATING METHOD OF NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY DEVICE IMPLEMENTING THE SAME
摘要 PURPOSE: An operating method of a nonvolatile memory device, and the nonvolatile memory device implementing the same are provided to improve the efficiency of programming and reading data by driving two word lines through one plane. CONSTITUTION: A first plane(310) comprises a first memory block group(310a) and a second memory block group(310b). A second plane(330) comprises a third memory block group(330a) and a fourth memory block group(330b). A controller(100) controls a voltage generator to generate a bias voltage from the voltage generator. The controller controls the voltage generator, a first page buffer, a second page buffer, a third page buffer, and a fourth page buffer. The first - fourth block decoding units(510-540) respectively corresponds to the first-fourth memory block group.
申请公布号 KR20100095721(A) 申请公布日期 2010.09.01
申请号 KR20090014680 申请日期 2009.02.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, JUNG CHUL;LIM, KYU HEE
分类号 G11C16/34;G11C16/08;G11C16/10 主分类号 G11C16/34
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