| 摘要 |
PURPOSE: A semiconductor device is provided to uniformly operate an N type MOS transistor for ESD protection by setting the proper number of via holes on a source region. CONSTITUTION: A gate region and a drain region are alternatively arranged while interposing a gate electrode on an N type MOS transistor for ESD protection. The drain region is electrically connected with an external connector. The source region is electrically connected to a ground potential supply line by interposing a first metal wiring(811) and a second metal wiring. The second metal wiring is connected to the first metal wiring by a via hole(601) with a preset size. The number of via holes increases far away from a ground potential supply line(701). |
