| 摘要 |
[Object] The present invention was conceived in light of the above problems, and it is an object thereof to provide a reliable and long-lasting semiconductor laser element with which heat generation near the cavity end face can be kept to a minimum even with high-output semiconductor laser elements, the COD level can be improved, and a good FFP shape can be obtained. [Means for Solving Problem] A semiconductor laser element, comprises: a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside. |
