发明名称
摘要 A load drive circuit which can operate at high speed with low consumption current while performing the gate-to-source over voltage protection for its load driving field-effect transistor. A Zener function device is connected between the gate and the source of the load driving field-effect transistor, and an on/off-switch circuit to supply either on-potential or off-potential to the gate of the field effect transistor is provided. The current flowing through the Zener function device when the load driving field-effect transistor is conductive is limited by the on/off-switch circuit.
申请公布号 JP4536108(B2) 申请公布日期 2010.09.01
申请号 JP20070320808 申请日期 2007.12.12
申请人 发明人
分类号 H03K17/08;H03K17/04;H03K17/687;H03K19/0175 主分类号 H03K17/08
代理机构 代理人
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