发明名称 |
Flash memory devices and programming methods that vary programming conditions in response to a selected step increment |
摘要 |
A flash memory device includes a flash memory cell array having flash memory cells arranged with word and bit lines, a word line driver circuit configured to drive the word lines at a selected step increment during a programming operation, a bulk-voltage supply circuit configured to supply a bulk voltage into a bulk of the flash memory cell array and a writing circuit configured to drive the bit lines selected by conditions during a programming operation. A control logic block is configured to control the writing circuit and the bulk-voltage supply circuit during the programming operation. The control logic block is configured to cause the writing circuit and/or the bulk-voltage supply circuit to change at least one of the conditions of the writing circuit and/or the bulk voltage responsive to the selected step increment.
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申请公布号 |
US7787305(B2) |
申请公布日期 |
2010.08.31 |
申请号 |
US20080134648 |
申请日期 |
2008.06.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM IN-MO;JEONG JAE-YONG;YOON CHI-WEON |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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