发明名称 Apparatus and method for manufacturing high purity polycrystalline silicon
摘要 An apparatus for manufacturing high purity polycrystalline silicon comprises a vertical reactor, a vaporizer and a fusing evaporator for supplying gaseous silicon chloride and zinc, respectively. The fusing evaporator further comprises a zinc evaporator, a main vertical cylinder part connected to the upper part of the zinc evaporator, a solid trapping pipe inserted in the main vertical cylinder part, a zinc introducing pipe connected to the solid trapping pipe at an angle, a seal pot surrounding the lower portion of the solid trapping pipe, an induction heater surrounding the main vertical cylinder part, and a gas vent pipe connected to the side wall of the zinc evaporator.
申请公布号 US7785546(B2) 申请公布日期 2010.08.31
申请号 US20080049641 申请日期 2008.03.17
申请人 CHISSO CORPORATION 发明人 NAMIKI NOBUAKI
分类号 B01J19/00;C01B33/02 主分类号 B01J19/00
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