发明名称 Exposure mask and method for fabricating semiconductor device using the same
摘要 An exposure mask for recess gate includes a transparent substrate and a recess gate pattern. The recess gate pattern is disposed over the transparent substrate. The recess gate pattern includes a first portion having a first line width and a second portion having a second line width smaller than the first line width. In the second portion, elements of the recess gate pattern are separated.
申请公布号 US7785483(B2) 申请公布日期 2010.08.31
申请号 US20070771475 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG YONG SOON
分类号 B44C1/22;G03F1/00 主分类号 B44C1/22
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