| 摘要 |
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.
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