| 摘要 |
A layered semiconductor wafer contains the following layers in the given order: a monocrystalline substrate wafer (1) containing substantially silicon, a first amorphous intermediate layer (2) of an electrically insulating material having a thickness of 2 nm to 100 nm, a monocrystalline first oxide layer (3) having a cubic Ia-3 crystal structure, a composition of (M12O3)1-x(M22O3)x wherein each of M1 and M2 is a metal and wherein 0≦̸x≦̸1, and a lattice constant which differs from the lattice constant of the material of the substrate wafer by 0% to 5%. The invention also relates to a process for manufacturing such semiconductor wafers by epitaxial deposition.
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