发明名称 |
Method to detect poly residues in LOCOS process |
摘要 |
A test structure which can be used to detect residual conductive material such as polysilicon which can result from an under etch comprises a PMOS transistor and an OTP EPROM floating gate device. By testing the devices using different testing parameters, it can be determined whether residual conductive material remains subsequent to an etch, and where the residual conductive material is located on the device. A method for testing a semiconductor device using the test structure is also described.
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申请公布号 |
US7785906(B2) |
申请公布日期 |
2010.08.31 |
申请号 |
US20070954773 |
申请日期 |
2007.12.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WU XIAOJU;MITROS JOZEF CZESLAW |
分类号 |
G01R31/26;H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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