发明名称 |
Semiconductor device having tiles for dual-trench integration and method therefor |
摘要 |
A method for forming a semiconductor device includes providing a semiconductor substrate having a first region and a second region. The first region has one or more first elements and the second region has one or more second elements. The first elements are different from the second elements. A tile location and a first tile surface area for a tile feature on the semiconductor device is defined. An active semiconductor layer is formed over both the first region and the second region of the semiconductor substrate. A first trench is formed in the active semiconductor layer at the tile location using a negative tone mask. The first trench has a first depth and forms at least a portion of the tile feature. A second trench is formed in the active semiconductor layer using a positive tone mask. The second trench has a second depth different than the first depth.
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申请公布号 |
US7785983(B2) |
申请公布日期 |
2010.08.31 |
申请号 |
US20070683236 |
申请日期 |
2007.03.07 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZIA OMAR;TIAN RUIQI |
分类号 |
H01L21/76;H01L21/336 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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