发明名称 |
Process for manufacturing wafer of silicon carbide single crystal |
摘要 |
A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an α (hexagonal)-silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001]c axis of the silicon carbide single crystal; disposing the wafer in a reaction vessel; feeding a silicon source gas and carbon source gas in the reaction vessel; and epitaxially growing the α (hexagonal) silicon carbide single crystal on the wafer by allowing the silicon source gas and carbon source gas to react.
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申请公布号 |
US7785414(B2) |
申请公布日期 |
2010.08.31 |
申请号 |
US20050597568 |
申请日期 |
2005.05.25 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
MARUYAMA TAKAYUKI;CHIBA TOSHIMI |
分类号 |
C30B23/00;C23C16/42;C30B25/02;C30B25/18;C30B28/12;C30B29/36;H01L21/20;H01L21/205 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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