| 摘要 |
An electrostatic protective circuit includes a bipolar transistor, a bipolar transistor and an FET. The bipolar transistors and are coupled in series between a signal line and the ground (GND). The FET is configured that a source and a bulk thereof are coupled to a node N situated between the bipolar transistors, a gate is coupled to the signal line, and a drain is coupled to the power supply.
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