| 摘要 |
The present invention relates to a semiconductor wafer comprising the following layers in the given order:
- a monocrystalline substrate wafer (1) consisting essentially of silicon,
- a first amorphous intermediate layer (2) comprising an electrically insulating material and having a thickness of 2 nm to 100 nm,
- a monocrystalline first oxide layer (3) having a cubic Ia-3 crystal structure, a composition of (Me1 2 O 3 ) 1-x (Me2 2 O 3 ) x wherein each of Me1 and Me2 is a metal and wherein 0 ‰ x ‰ 1, and a lattice constant which differs from the lattice constant of the material of the substrate wafer by 0 % to 5 %. The invention also relates to a process for manufacturing this semiconductor wafer by epitaxial deposition. |
