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发明名称
Memory element and memory device comprising memory layer positioned between first and second electrodes
摘要
申请公布号
US7786459(B2)
申请公布日期
2010.08.31
申请号
US20050280561
申请日期
2005.11.15
申请人
SONY CORPORATION
发明人
ARATANI KATSUHISA;TSUSHIMA TOMOHITO;KOUCHIYAMA AKIRA;MIZUGUCHI TETSUYA
分类号
H01L29/02
主分类号
H01L29/02
代理机构
代理人
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