| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form contact-plugs for decoupling capacitors which is isolated in the opening region of an interlayer insulating layer by eliminating a conductive layer on the interlayer insulating film. CONSTITUTION: A plurality of decoupling capacitors(14B1, 14B2) is formed on a semiconductor substrate(11). Contact-plugs for the decoupling capacitors are arranged between the semiconductor substrate and the decoupling capacitors. The contact plugs for the decoupling capacitors include a plurality of first contact plugs and a plurality of second contact plugs. The contact plugs for the decoupling capacitors are insulated by interlayer insulting film(IL) from each other. Storage contact-plugs(CS1) connecting with storage landing-pads(C1) are formed in the interlayer insulating film. |
