发明名称 SEMICONDUCTOR MEMORY DEVICE FOR REDUCING POWER NOISE
摘要 PURPOSE: A semiconductor memory device is provided to reduce a power noise by varying a clock cycle of an inner clock signal in response to each command when a command with large current consumption is applied through a test. CONSTITUTION: An internal clock generator(250) generates an internal clock signal with a first clock cycle in response to a chip enable signal. The inner clock generator varies the clock cycle of the inner clock signal in response to the clock control signal. A control unit(220) applies an external command including a chip enable signal. The controller generates a clock control signal by corresponding to the external command. A power voltage sensor outputs the sensing signal by sensing the level variation of the power voltage.
申请公布号 KR20100095250(A) 申请公布日期 2010.08.30
申请号 KR20090014434 申请日期 2009.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 ZHANG, PYUNG MOON
分类号 G11C7/22;G11C5/14;G11C7/10 主分类号 G11C7/22
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