发明名称 |
SEMICONDUCTOR MEMORY DEVICE FOR REDUCING POWER NOISE |
摘要 |
PURPOSE: A semiconductor memory device is provided to reduce a power noise by varying a clock cycle of an inner clock signal in response to each command when a command with large current consumption is applied through a test. CONSTITUTION: An internal clock generator(250) generates an internal clock signal with a first clock cycle in response to a chip enable signal. The inner clock generator varies the clock cycle of the inner clock signal in response to the clock control signal. A control unit(220) applies an external command including a chip enable signal. The controller generates a clock control signal by corresponding to the external command. A power voltage sensor outputs the sensing signal by sensing the level variation of the power voltage.
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申请公布号 |
KR20100095250(A) |
申请公布日期 |
2010.08.30 |
申请号 |
KR20090014434 |
申请日期 |
2009.02.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
ZHANG, PYUNG MOON |
分类号 |
G11C7/22;G11C5/14;G11C7/10 |
主分类号 |
G11C7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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