PROTECTION OF CONDUCTORS FROM OXIDATION IN DEPOSITION CHAMBERS

摘要

PURPOSE: A method for protecting a conductor with low resistivity in a deposition chamber is provided to form a conductive layer with high conductivity and low resistance by flowing reduction gas for preventing oxidation when a substrate is unloaded from the deposition chamber. CONSTITUTION: A substrate is provided to a chemical vapor deposition chamber(210). A transition metal nitride layer is deposited on the substrate in the chemical vapor deposition chamber at any deposition pressure and temperature(220). Reduction gas with inactive gas and a reducer is flowed into the chemical vapor deposition chamber and the pressure of the chemical vapor deposition chamber is continuously increased from the deposition pressure to the unloading pressure(230). The substrate is unloaded from the chemical vapor deposition chamber at the unloading pressure and temperature(250).