SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a gate tunnel leakage current by injecting foreign materials to one pair of first and second p type wells where one pair of first and second MIS transistors are formed. CONSTITUTION: One pair of first and second p type wells which first and second MIS transistors are formed is provided. A gate electrode and a gate electrode are respectively formed on the first and second p type wells. A phosphor ion is injected into a first p type well(210). A second p type well(212) is injected to arsenic ion. After the arsenic and phosphorous are injected, a sidewall is formed on the gate electrode. After the sidewall is completely formed, the arsenic is injected to the first and second p type wells. A device isolation region(201) is formed by removing a silicon nitride layer.