| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to reduce the deviation of a memory cell transistor property due to a bird's beak by including a silicon nitride layer on an insulation layer between electrodes. CONSTITUTION: A tunnel insulation layer(2) is formed on a semiconductor substrate(1). A floating gate electrode(3) comprises a first floating gate electrode(3a) formed on the tunnel insulation layer and a second floating gate electrode(3b) formed on the first floating gate electrode. A device isolation layer(4) is contacted with the side of a channel width direction of the tunnel insulation layer and the first floating gate electrode. An insulation layer(5) between electrodes continuously covers the upper side of the device isolation layer, the side of the channel width direction, and the upper side of the floating gate electrode. A control gate electrode(6) is formed on the insulation layer between the electrodes.</p> |
