| 摘要 |
<p>PURPOSE: A method for manufacturing a memory device and a method for manufacturing a phase-change memory device using the same are provided to reduce the density of cobalt on the surface of an oxide film by eliminating a cobalt oxide using an etching solution for the oxide film. CONSTITUTION: An oxide film(110) is formed on a semiconductor substrate(100). A cobalt film, a titanium film, and a titanium nitride film are successively formed on the upper side of the oxide film. A rapids thermal treatment is performed with respect to a silicon layer on which the cobalt film, the titanium film, and the titanium nitride film are formed. A cobalt silicide film is formed on the surface of the silicon layer. A dip-out operation is performed on the silicon layer including the cobalt silicide film. An etching operation is performed.</p> |
