NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a forming method thereof are provided to improve the reliability of a nonvolatile memory device by preventing a charge trap layer trapped on a first region from being moved to a second region. CONSTITUTION: A device isolation pattern(120) defines an active region(110) on a semiconductor substrate and is extended in a first direction. A charge trap layer(140) covers the active region and a device isolation pattern. A word line(160) is extended in a second direction cross the active region of the charge trap layer.