Growth of polycrystalline 3C-SiC thin films by in-situ doping,申请号KR20080072907-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Growth of polycrystalline 3C-SiC thin films by in-situ doping
摘要
申请公布号	KR100978711(B1)	申请公布日期	2010.08.30
申请号	KR20080072907	申请日期	2008.07.25
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Three-dimensional measuring system for animals using light pattern triangulation

Brush holder lead frame with integral electrical terminals

Method for reducing a metal seam in an interconnect structure and a device manufactured thereby

Stigmator assembly

Coating composition comprising a bicyclo-orthoester-functional compound, an isocyanate-functional compound, and a thiol-functional compound

Method and apparatus for notifying administrators of selected events in a distributed computer system

Industrial truck having an interface for diagnostic data

Method and apparatus for solid state molecular analysis

Methods, systems and software for gene expression data analysis

Methods for preparing improved enzyme variants

Multi-repository display system using separate presentation, adaptation and access layers

Information processing apparatus and communication setting method

Heat conducting sample block

Optical sheet and display device having the optical sheet

Adaptive aero-thermodynamic engine model

Body fluid sample preparation

ADJUSTABLE READER ARRANGEMENT AND METHOD OF READING ENCODED INDICIA FORMED ON AN OBJECT

Lipid pool aspiration arrangement for the treatment of vulnerable atherosclerosis plaque

Wood collection and reducing machine