INZNO THIN FILM AND FABRICATION METHOD THEREOF

摘要

PURPOSE: An InZnO thin film and a manufacturing method thereof are provided to reduce manufacturing costs by using a solution based process without using a high expensive vacuum apparatus. CONSTITUTION: In an amorphous oxide semiconductor thin film, In is doped with ZnO. A composition ratio of In to Zn is 60:40 to 40:60 mol%. A precursor solution includes In and Zn and is thermally processed at 300 degrees centigrade or less.