NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to uniformly maintain the threshold voltage and the Ion/Ioff rate in an identical device. CONSTITUTION: A first electrode(12) and a second electrode(17) are formed on a substrate(11). Conductive organic layers(13, 16) are formed between the first electrode and the second electrode. A nano-crystal layer(15) is formed in the conductive organic layers. The nano-crystal layer includes a plurality of nano-crystals which is covered by an amorphous barrier. A driving unit drives both terminals of the first electrode and the second electrode.