发明名称 SYNTHETIC FERRIMAGNET REFERENCE LAYER FOR A MAGNETIC STORAGE DEVICE
摘要 A synthetic ferrimagnet reference layer (14) for a magnetic storage device has first and second layers (50, 52) of magnetic material operable to be magnetized in first and second magnetic orientations. A spacer layer (54) between the layers of magnetic material (50, 52) is of suitable dimensions to magnetically couple the magnetic layers (50, 52) in opposite directions. The layers of magnetic material (50, 52) have substantially the same coercivities. <IMAGE>A synthetic ferrimagnet reference layer (14) for a magnetic storage device has first and second layers (50, 52) of magnetic material operable to be magnetized in first and second magnetic orientations. A spacer layer (54) between the layers of magnetic material (50, 52) is of suitable dimensions to magnetically couple the magnetic layers (50, 52) in opposite directions. The layers of magnetic material (50, 52) have substantially the same coercivities. <IMAGE>
申请公布号 KR100978641(B1) 申请公布日期 2010.08.27
申请号 KR20030013710 申请日期 2003.03.05
申请人 发明人
分类号 G11C11/15 主分类号 G11C11/15
代理机构 代理人
主权项
地址