发明名称 |
METHOD FOR USING APPARATUS CONFIGURED TO FORM GERMANIUM-CONTAINING FILM |
摘要 |
PURPOSE: A method for using an apparatus for depositing a germanium contained film is provided to eliminate metal which is contained in the surface of quartz by supplying hydrogen gas and oxygen gas into a reaction container and using the active species of the hydrogen gas and the oxygen gas. CONSTITUTION: A cylindrical reaction container(2) is prepared. A cover(23) is installed to the lower side of the reaction container in order to hermetically close an opening(21) of a furnace. A flange(22) is integrated into the peripheral side of the opening of the furnace. A wafer boat(25) is loaded on the center part of the cover. Four struts(26) are installed to the wafer boat.
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申请公布号 |
KR20100094951(A) |
申请公布日期 |
2010.08.27 |
申请号 |
KR20100014517 |
申请日期 |
2010.02.18 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FURUSAWA YOSHIKAZU;OKADA MITSUHIRO |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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