发明名称 METHOD FOR USING APPARATUS CONFIGURED TO FORM GERMANIUM-CONTAINING FILM
摘要 PURPOSE: A method for using an apparatus for depositing a germanium contained film is provided to eliminate metal which is contained in the surface of quartz by supplying hydrogen gas and oxygen gas into a reaction container and using the active species of the hydrogen gas and the oxygen gas. CONSTITUTION: A cylindrical reaction container(2) is prepared. A cover(23) is installed to the lower side of the reaction container in order to hermetically close an opening(21) of a furnace. A flange(22) is integrated into the peripheral side of the opening of the furnace. A wafer boat(25) is loaded on the center part of the cover. Four struts(26) are installed to the wafer boat.
申请公布号 KR20100094951(A) 申请公布日期 2010.08.27
申请号 KR20100014517 申请日期 2010.02.18
申请人 TOKYO ELECTRON LIMITED 发明人 FURUSAWA YOSHIKAZU;OKADA MITSUHIRO
分类号 H01L21/205 主分类号 H01L21/205
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