METHOD OF GROWING GALIUM NITRIDE LAYER AND MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for growing gallium nitride layer and a method for manufacturing a nitride semiconductor device are provided to improve the morphology of the surface by minimizing the generation of pits on the surface. CONSTITUTION: A nitride gallium film(101) is formed on a substrate. Nitrogen-source gas and gallium-source gas are injected into a reactor to grow the nitride gallium film. Pits(P) are formed on the surface of the nitride gallium film. The gases including indium atom(103) is injected into the reactor, and a gallium atom(102) and the indium atom fill the pits by combining with vacant sites on the surface of the pits.