| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin transistor having a low-resistance electrode structure allowing efficient spin-polarized current injection, and a method of manufacturing the same. SOLUTION: This spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes the following structure: n+ type semiconductor regions 12A, 12B are formed in a semiconductor region 12; a magnetic layer 31 containing a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe)is formed on the n+ type semiconductor regions 12A, 12B; and the n+ type semiconductor regions 12A, 12B and the magnetic layer 31 contain the same impurity element. COPYRIGHT: (C)2010,JPO&INPIT |
