| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin transistor using a Heusler alloy layer high in spin polarizability. Ž<P>SOLUTION: This spin transistor includes: a gate electrode 13 formed on a semiconductor substrate 11; and a source electrode and a drain electrode formed in grooves formed on the semiconductor substrate 11 on both sides of the gate electrode 13. At least either of the source electrode and the drain electrode includes: an MgO layer 14 formed on the bottom face in the groove formed on the substrate 11 and on a side face in the groove on the gate electrode 13 side; and a Heusler alloy layer 15 formed on the MgO layer 14 in the groove. The thickness of the MgO layer 14A formed on the side face is smaller than that of the MgO layer 14 formed on the bottom face. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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