THE GRAPHITE RING FOR YIELD IMPROVEMENT

摘要

PURPOSE: The graphite ring device for the silicon epitaxial ingot yield up eliminates the impurity existing inside the silicon single crystal growing furnace. The ingot production yield is improved. CONSTITUTION: The quartz crucible(104) is accepted inside the chamber(108). The quartz crucible support stand(107) supports the quartz crucible. The heater(105) transfers the heat to the quartz crucible. The insulating material(109) locates between the chamber and heater. The graphite ring(101) installs at the upper part of the top ring(102).