发明名称 ELECTRODE-PLATE STRUCTURE FOR PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve in-plane uniformity of an etching depth by reducing a temperature difference occurring between the central part and the outer peripheral part of an electrode plate. <P>SOLUTION: An electrode-plate structure 20 is used in a plasma treatment device. The electrode-plate structure comprises: an electrode plate 3 to which a high-frequency voltage is applied; and a cooling plate 14 fixed on the rear face of the electrode plate 3 into a close contact state. The electrode plate 3 is configured such that the thickness t1 of the central part is formed smaller than the thickness t2 of the outer peripheral part. The cooling plate 14 is configured corresponding to the electrode plate 3 such that the thickness of the central part is formed larger than the thickness of the outer peripheral part. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010186876(A) 申请公布日期 2010.08.26
申请号 JP20090030145 申请日期 2009.02.12
申请人 MITSUBISHI MATERIALS CORP 发明人 HISANAGA TSUTOMU;YONEHISA TAKASHI
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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