发明名称 |
HVPE SHOWERHEAD DESIGN |
摘要 |
A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
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申请公布号 |
US2010215854(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20100776351 |
申请日期 |
2010.05.07 |
申请人 |
BURROWS BRIAN H;TAM ALEXANDER;STEVENS RONALD;GRAYSON JACOB;CHOI KENRIC T;ACHARYA SUMEDH;NIJHAWAN SANDEEP;KRYLIOUK OLGA;MELNIK YURIY |
发明人 |
BURROWS BRIAN H.;TAM ALEXANDER;STEVENS RONALD;GRAYSON JACOB;CHOI KENRIC T.;ACHARYA SUMEDH;NIJHAWAN SANDEEP;KRYLIOUK OLGA;MELNIK YURIY |
分类号 |
C23C16/455;C23C16/00;C23C16/08 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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