RIGID SEMICONDUCTOR MEMORY HAVING AMORPHOUS METAL OXIDE SEMICONDUCTOR CHANNELS

摘要

Rigid semiconductor memory using amorphous metal oxide semiconductor channels are useful in the production of thin-film transistor memory devices. Such devices include single-layer and multi-layer memory arrays of volatile or non- volatile memory cells. The memory cells can be formed to have a gate stack overlying an amorphous metal oxide semiconductor, with amorphous metal oxide semiconductor channels.