| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage, and a method of manufacturing same. Ž<P>SOLUTION: The semiconductor device includes: a semiconductor layer including a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type, the second semiconductor region having a first conductivity type impurity concentration lower than a first conductivity type impurity concentration of the first semiconductor region; a source region of a second conductivity type provided on the first semiconductor region; a drain region of the second conductivity type provided on the second semiconductor region; an insulating film provided on the semiconductor layer between the source region and the drain region; a gate electrode provided on the insulating film; and a drift region of the second conductivity type provided in a surface layer portion of the semiconductor layer between the gate electrode and the drain region, the drift region being in contact with the drain region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the drain region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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