发明名称 Magnetoresistive effect element in cpp-type structure and magnetic disk device
摘要 An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
申请公布号 US2010214701(A1) 申请公布日期 2010.08.26
申请号 US20090379625 申请日期 2009.02.26
申请人 TDK CORPORATION 发明人 TSUCHIYA YOSHIHIRO;HARA SHINJI;CHOU TSUTOMU;MATSUZAWA HIRONOBU
分类号 G11B5/127 主分类号 G11B5/127
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