发明名称 Memory module having a plurality of phase change memories, buffer RAM and nand flash memory
摘要 A memory module comprises a plurality of main memories; a buffer RAM configured to temporarily store data being provided to or read from the main memories and to perform a buffer function between an external device and the main memories; and a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM.
申请公布号 US2010214813(A1) 申请公布日期 2010.08.26
申请号 US20100656224 申请日期 2010.01.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JANGSEOK;LEE DONGYANG
分类号 G11C5/02;G11C5/14 主分类号 G11C5/02
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