发明名称 |
Memory module having a plurality of phase change memories, buffer RAM and nand flash memory |
摘要 |
A memory module comprises a plurality of main memories; a buffer RAM configured to temporarily store data being provided to or read from the main memories and to perform a buffer function between an external device and the main memories; and a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM.
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申请公布号 |
US2010214813(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20100656224 |
申请日期 |
2010.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JANGSEOK;LEE DONGYANG |
分类号 |
G11C5/02;G11C5/14 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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