| 摘要 |
A solid-state imaging apparatus includes: an electric charge collecting region (104) of a first conductivity type arranged on a semiconductor substrate to collect an electric charge; a first surface region (105) of a second conductivity type formed on a surface of the semiconductor substrate to cover at least a part of the electric charge collecting region; a floating diffusion region (103) of the first conductivity type; and an electrode (102) covering a whole surface of the electric charge collecting region, for biasing through a gate insulating film to transfer the electric charge in the electric charge collecting region to the floating diffusion region, wherein the electrode has a film thickness effective to transmit light, and, under the electrode, arranged are a portion spaced from the floating diffusion region and including the first surface region, and a portion closer to the floating diffusion region and not including the first surface region.
|
