<p>Methods of monitoring critical dimensions in a semiconductor fabrication process include capturing at least one image of a first structure that has an effect on the polarization state of light reflected therefrom. For at least some of the first structure images, a value is calculated indicative of intensity of light reflected from the first structure. A critical dimension of the first structure is obtained and correlated with the calculated value. At least one image of a subsequent structure is captured. A determination is made, based at least in part on the calculated value, of a critical dimension of the subsequent structure.</p>
申请公布号
WO2010096407(A1)
申请公布日期
2010.08.26
申请号
WO2010US24358
申请日期
2010.02.17
申请人
RUDOLPH TECHNOLOGIES, INC.;BALAK, SCOTT A.;CHO, BYEONG-OK;SUN, GANG