| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable power semiconductor device having sufficient heat radiation properties by a simple method in power semiconductor devices of which electrodes are extended from resin casings to the outside. <P>SOLUTION: The power semiconductor device includes: a substrate 23 including a heat sink 18 on the rear; a semiconductor element 26 fixed onto the front of the substrate, namely a surface opposite to the rear of the substrate; the resin casing 10 covering the substrate and the semiconductor element so that the heat sink, namely the rear of the substrate, is exposed; and a fixing plate 16 partially covered with the resin casing and extended outside the resin casing at other portions that are screwed to the heat sink and include a through hole 17. The through hole is positioned at the front side of the substrate as compared with the rear of the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
