| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon nanocrystals using ICP (inductively coupled plasma) which can minimize plasma diffusion phenomena, thereby improving the particle size characteristics and qualities of the silicon nanocrystals. <P>SOLUTION: The apparatus for producing silicon nanocrystals includes a quartz reactor having an ICP coil wound around an outer wall thereof and a quartz tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals such as a silane gas and a secondary gas for surface reaction of the silicon nanocrystals such as hydrogen and a boron compound are separately supplied to the reactor through an inner side and an outer side of the quartz tube, respectively, together with an argon gas. <P>COPYRIGHT: (C)2010,JPO&INPIT |
